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Monolayer graphene 2” wafer

5.800,00€

This product consists on a single-layer graphene grown on silicon carbide substrate – Processed in Clean Room Class 1000.

Quantity
Category:

Description

Coverage percentage
>95%
Monolayer percentage
>60%
Mobility @ 300 K
up to 3000 cm2V-1s-1
Conductivity
n-type
Optical transmittance
>97%
Sheet resistance @ 300 k
2KΩ - 5KΩ
Sheet carrier density
5x1011 - 5.0x1012

Quality control

Full characterization

  • Optical microscope
  • Atomic force microscope
  • Raman
  • Electrical characterization

Additional methods are also available:

  • SEM
  • XPS
  • HRTEM

Applications

High-performance RF transistors

Ultrafast photodetectors

Gas sensors

Metrology

Downloads

2 inch GSiC wafer Datasheet_GPNT

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In addition to our stablished products, we are dedicated to the development of new strategies for producing graphene-based electronic devices, which combine the well-known characteristics of SiC and the enormous potential for electronic applications of graphene. We can offer multilayer graphene, doped substrates, intercalated graphene, non-standard sizes and graphene on carbon-face among others. Do not hesitate to reach us out.